Shu Shi

Full Publication List

Publications are listed in reverse chronological order. * Equal contribution.

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2026

  1. Shi, S., Xi, H., Su, H., Sawyerr, F., Liu, Z., Zhang, Z., Huangfu, G., Niu, J., Sun, Y., Yang, P., Gong, X., Chen, W., Tsymbal, E. Y., Yan, X., Tian, H., Cao, T., & Chen, J. “Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers,” Nature Communications, 2026. DOI

2025

  1. Zhao, T., Zheng, Z., Wang, J., Zhou, G., Liu, L., Zhou, C., Xie, Q., Jia, L., Xiao, R., Zhang, Q., Ren, L., Shi, S., Zeng, T., Gu, Y., Xu, X., Zhang, Y., & Chen, J. “Spin logic enabled by current vector adder,” Nature Communications, 2025, 2988.

2024

  1. Shi, S., Xi, H., Cao, T., Lin, W., Liu, Z., Niu, J., Lan, D., Zhou, C., Cao, J., Su, H., Zhao, T., Yang, P., Zhu, Y., Yan, X., Tsymbal, E. Y., Tian, H., & Chen, J. “Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films,” Nature Communications, 14, 1780. DOI
  2. Shi, S., Cao, T., Xi, H., Niu, J., Jing, X., Su, H., Yu, X., Yang, P., Wu, Y., Yan, X., Tian, H., Tsymbal, E. Y., & Chen, J. “Stabilizing the ferroelectric phase of Hf0.5Zr0.5O2 thin films by charge transfer,” Physical Review Letters, 133, 036202. DOI
  3. Zeng, T.*, Shi, S.*, Hu, K.*, Jia, L., Li, B., Sun, K., Su, H., Gu, Y., Xu, X., Song, D., Yan, X., & Chen, J. “Approaching the ideal linearity in epitaxial crystalline-type memristor by controlling filament growth,” Advanced Materials, 2401021. DOI
  4. Zhang, Q.*, Shi, S.*, Zheng, Z.*, Zhou, H., Shao, D., Zhao, T., Su, H., Liu, L., Shu, X., Jia, L., Gu, Y., Xiao, R., Wang, G., Zhao, C., Li, H., & Chen, J. “Highly energy-efficient spin current generation in SrIrO3 by manipulating the octahedral rotation,” ACS Applied Materials & Interfaces, 16, 1129–1136.
  5. Zheng, Z., Zeng, T., Zhao, T., Shi, S., Ren, L., Zhang, T., Jia, L., Gu, Y., Xiao, R., Zhou, H., Zhang, Q., Lu, J., Wang, G., Zhao, C., Li, H., Tay, B., & Chen, J. “Effective electrical manipulation of a topological antiferromagnet by orbital torques,” Nature Communications, 15, 745.
  6. Gu, Y., Zheng, Z., Jia, L., Shi, S., Zhao, T., Zeng, T., Zhang, Q., Zhu, Y., Wang, H., & Chen, J. “Ferroelectric control of spin-orbitronics,” Advanced Functional Materials, 2406444.
  7. Chen, H., Zhou, G., Ji, H., Qin, Q., Shi, S., Shen, Q., Yao, P., Cao, Y., Chen, J., Liu, Y., Wang, H., Lin, W., Yang, Y., Jia, J., Xu, X., Chen, J., & Liu, L. “Spin-orbit torque switching of magnetization in ultra-thick ferromagnetic layers,” Advanced Functional Materials, 2403107.
  8. Jia, L., Zheng, Z., Zhang, X., Zhang, Q., Sim, S., Zhao, T., Gu, Y., Zeng, T., Xiao, R., Shi, S., Wu, J., Shen, L., Novoselov, K., & Chen, J. “Unidirectional magnetoresistance in the van der Waals antiferromagnet CrPS4,” Physical Review B, 110, 214411.
  9. Guo, J., Wang, F., Duo, Z., Sun, Y., Song, J., Hou, Y., Dai, X., Zhao, W., Yan, S., Hu, X., Lou, J., Wang, Y., Shi, S., Chen, J., Liu, B., & Yan, X. “Ultra-thin cubic Ti3Al buffer/template layer achieving giant polarization of epitaxial Pb(Zr0.40Ti0.60)O3 film,” Advanced Functional Materials, 2415919.
  10. Lan, D., Yao, B., Swamynadhan, M., Li, N., Cao, J., Shi, S., Yu, X., Yang, P., Wu, X., Liu, C., Chen, P., Chen, J., Ghosh, S., & He, Q. “Interfacial electronic and magnetic reconstructions in manganite/titanate superlattices,” Advanced Materials Interfaces, 2300903.

2023

  1. Yan, X., Jia, X., Zhang, Y., Shi, S., Wang, L., Shao, Y., Sun, Y., Sun, S., Zhao, Z., Zhao, J., Sun, J., Guo, Z., Guan, Z., Zhang, Z., Han, X., & Chen, J. “A low-power Si:HfO2 ferroelectric tunnel memristor for spiking neural networks,” Nano Energy, 107, 108091.
  2. Zheng, Z., Gu, Y., Zhang, Z., Zhang, X., Zhao, T., Li, H., Ren, L., Jia, L., Xiao, R., Zhou, H., Zhang, Q., Shi, S., Zhang, Y., Zhao, C., Shen, L., Zhao, W., & Chen, J. “Coexistence of magnon-induced and Rashba-induced unidirectional magnetoresistance in antiferromagnets,” Nano Letters, 23, 6378–6385.

2022

  1. Liu, L., Zhou, C., Zhao, T., Yao, B., Zhou, J., Shu, X., Chen, S., Shi, S., Xi, S., Lan, D., Lin, W., Xie, Q., Ren, L., Luo, Z., Sun, C., Yang, P., Guo, E., Dong, Z., Manchon, A., & Chen, J. “Current-induced self-switching of perpendicular magnetization in CoPt single layer,” Nature Communications, 13, 35–39.
  2. Gao, J., Lian, X., Chen, Z., Shi, S., Li, E., Wang, Y., Jin, T., Chen, H., Liu, L., Chen, J., Zhu, Y., & Chen, W. “Multifunctional MoTe2 Fe-FET enabled by ferroelectric polarization-assisted charge trapping,” Advanced Functional Materials, 32, 2110415.
  3. Zhao, Z., Abdelsamie, A., Guo, R., Shi, S., Zhao, J., Lin, W., Sun, K., Wang, J., Wang, J., Yan, X., & Chen, J. “Flexible artificial synapse based on single-crystalline BiFeO3 thin film,” Nano Research, 15, 2682–2688.
  4. Yue, S., Cheng, H., He, H., Guan, X., Le, Q., Shu, X., Shi, S., Chen, J., & Ouyang, J. “Photo-enhanced Seebeck effect of a highly conductive thermoelectric material,” Journal of Materials Chemistry A, 9, 16725–16732.

2021

  1. Liu, L., Zhou, C., Shu, X., Li, C., Zhao, T., Lin, W., Deng, J., Xie, Q., Chen, S., Zhou, J., Guo, R., Wang, H., Yu, J., Shi, S., Yang, P., Pennycook, S., Manchon, A., & Chen, J. “Symmetry-dependent field-free switching of perpendicular magnetization,” Nature Nanotechnology, 16, 277–282.
  2. Zhou, J., Zhao, T., Shu, X., Liu, L., Lin, W., Chen, S., Shi, S., Yan, X., Liu, X., & Chen, J. “Spin–orbit torque induced domain nucleation for neuromorphic computing,” Advanced Materials, 33, 2103672.
  3. Cao, J., Shi, S., Zhu, Y., & Chen, J. “An overview of ferroelectric hafnia and epitaxial growth,” physica status solidi (RRL) – Rapid Research Letters, 15, 2100025.