Dr. Shu Shi

Research Fellow
Department of Materials Science and Engineering
College of Design and Engineering
National University of Singapore (NUS)
Email: shishu@u.nus.edu

Academic profiles: Google Scholar | ORCID | LinkedIn | Publications | Contact

Research Interest

My research focuses on emerging non-volatile memory materials and devices, including HfO₂-based ferroelectric thin films, interface and multilayer engineering, resistive switching devices, memristors, and neuromorphic computing devices.

Selected current articles:

* Equal contribution.

Shu Shi, Haolong Xi, Hanxin Su, Fatoye Sawyerr, Zhongran Liu, Zekun Zhang, Geng Huangfu, Jiangzhen Niu, Yiyuan Sun, Ping Yang, Xiao Gong, Wei Chen, Evgeny Y Tsymbal, Xiaobing Yan, He Tian, Tengfei Cao, and Jingsheng Chen. "Approaching theoretical polarization limit in HfZrO₂/HfLaO₂ multilayers," Nature Communications, 2026. DOI
Shu Shi, Haolong Xi, Tengfei Cao, Weinan Lin, Zhongran Liu, Jiangzhen Niu, Da Lan, Chenghang Zhou, Jing Cao, Hanxin Su, Tieyang Zhao, Ping Yang, Yao Zhu, Xiaobing Yan, Evgeny Y Tsymbal, He Tian, and Jingsheng Chen. "Interface-engineered ferroelectricity of epitaxial Hf_0.5Zr_0.5O₂ thin films," Nature Communications, 2023. DOI
Shu Shi, Tengfei Cao, Haolong Xi, Jiangzhen Niu, Xixiang Jing, Hanxin Su, Xiaojiang Yu, Ping Yang, Yichen Wu, Xiaobing Yan, He Tian, Evgeny Y Tsymbal, and Jingsheng Chen. "Stabilizing the ferroelectric phase of Hf_0.5Zr_0.5O₂ thin films by charge transfer," Physical Review Letters, 2024. DOI
Tao Zeng*, Shu Shi*, Kejun Hu*, Lanxin Jia, Boyu Li, Kaixuan Sun, Hanxin Su, Youdi Gu, Xiaohong Xu, Dongsheng Song, Xiaobing Yan, and Jingsheng Chen. "Approaching the ideal linearity in epitaxial crystalline-type memristor by controlling filament growth," Advanced Materials, 2024. DOI
Tao Zeng, Zhongran Liu, Youdi Gu, Bingjie Dang, Yuan Gao, Tianlong Xu, Peng Li, Shu Shi, Kaixuan Sun, Yao Zhu, Xiao Gong, He Tian, and Jingsheng Chen. "A nitride-based non-volatile memory enabled by electric-field-induced phase transition," Nature Materials, 2026. DOI
Zhenyi Zheng*, Shu Shi*, Zhongran Liu*, Qihan Zhang*, Naafis Ahnaf Shahed, Himanshu Mavani, Guowei Zhou, Qian Chen, Cheng Zhang, Zhanqi Zhou, Tieyang Zhao, Rui Xiao, Lanxin Jia, Liang Liu, Evgeny Y. Tsymbal, Xiaohong Xu, He Tian, and Jingsheng Chen. "Spin-Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking,"Advanced Materials, 2026.DOI

Research Themes

Connecting fundamental materials physics with practical, energy-efficient memory and computing devices.

HfO₂-based Ferroelectric Thin Films

We investigate interface, strain, charge-transfer, and multilayer engineering strategies to stabilize polar phases and enhance polarization in epitaxial hafnia-based thin films.

Resistive Switching and Memristors

Our work explores switching physics and materials design for non-volatile memory devices, including conductive-filament control, crystalline-type memristors, and nitride-based memory concepts.

Neuromorphic Computing devices

We are also interested in non-volatile synaptic devices and high-linearity conductance modulation for energy-efficient devices implementation of neuromorphic computing.

Selected Awards

202520th Chunhui Cup China Overseas Talents Innovation & Entrepreneurship Competition — Excellent Award
2024NUS Enterprise Venture Initiation Programme (VIP) Award
2023National Self-funded Overseas Students Scholarship, China

Patents

Granted
Chen, J., Zeng, T., Shi, S. “A Memory Device and A Memory Array Thereof.”Singapore patent · 10202303610R
Filed
Shi, S., Guo, P. “High-temperature non-volatile memory cell based on doped AlN thin films, and its fabrication method and applications.”Chinese patent · 202510450762X
Filed
Shi, S., Guo, P. “High-temperature phase-transition-type non-volatile memory device.”Chinese patent · 202510469232X

Curriculum Vitae

Download CV ↗